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Impact of platinum contamination on ferroelectric memories

 
: Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H.

:

Integrated ferroelectrics 37 (2001), No.1/4, pp.405-412
ISSN: 1058-4587
English
Journal Article
Fraunhofer IISB ()

Abstract
The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide growth, 300 nm poly-silicon deposition and subsequent phosphorus doping. Breakdown characteristics were evaluated using a voltage ramp method. The current-voltage curves of MOS capacitors show very few low field breakdown events, and the main field breakdown occurs at 12 MV/cm. If compared to clean wafers, platinum does not increase the defect density seriously, It is found from the E-Ramp results that platinum contamination up to 4x10(14) at/cm(2) does not have a pronounced effect on the gate oxide integrity if the contamination occurs after front-end-of-line processing of device fabrication.

: http://publica.fraunhofer.de/documents/N-36922.html