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Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts

 
: Würfl, J.; Hilsenbeck, J.; Nebauer, E.; Tränkle, G.; Obloh, H.; Österle, W.

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Balk, L.J.:
Reliability of electron devices, failure physics and analysis : Proceedings of the 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. 2-6 October 2000, Dresden, Germany
Oxford: Pergamon, 2000 (Microelectronics reliability 40, 8/10 : Special issue)
pp.1689-1693
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <11, 2000, Dresden>
English
Conference Paper
Fraunhofer IAF ()

: http://publica.fraunhofer.de/documents/N-36904.html