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Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
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2000
Conference Paper
Titel
Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Author(s)
Würfl, J.
Hilsenbeck, J.
Nebauer, E.
Tränkle, G.
Obloh, H.
Österle, W.
Hauptwerk
Reliability of electron devices, failure physics and analysis
Konferenz
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2000
DOI
10.1016/S0026-2714(00)00128-1
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF