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Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
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2000
Conference Paper
Titel
Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide
Author(s)
Treu, M.
Schorner, R.
Friedrichs, P.
Rupp, R.
Wiedenhofer, A.
Stephani, D.
Ryssel, H.
Hauptwerk
Silicon carbide and related materials 1999. Vol.2
Konferenz
International Conference on Silicon Carbide and Related Materials (ICSCRM) 1999
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB