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Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide

 
: Treu, M.; Schorner, R.; Friedrichs, P.; Rupp, R.; Wiedenhofer, A.; Stephani, D.; Ryssel, H.

Carter, C.H.:
Silicon carbide and related materials 1999. Vol.2 : proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
Zürich-Uetikon: Trans Tech Publications, 2000 (Materials Science Forum 338/342)
ISBN: 0-87849-854-0
pp.1089-1092
International Conference on Silicon Carbide and Related Materials (ICSCRM) <1999, Research Triangle Park/NC>
English
Conference Paper
Fraunhofer IISB ()

: http://publica.fraunhofer.de/documents/N-36888.html