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The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

: Lichtenstein, N.; Winterhoff, R.; Scholz, F.; Schweizer, H.; Weiss, S.; Hutter, M.; Reichl, H.


IEEE Journal of Selected Topics in Quantum Electronics 6 (2000), No.4, pp.564-570
ISSN: 1077-260X
Journal Article
Fraunhofer IZM ()

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.