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Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC

 
: Hulsen, C.; Achtziger, N.; Herold, J.; Witthuhn, W.

Pensl, G.:
Silicon carbide and related materials : Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000 / ECSCRM 2000
Zuerich-Uetikon: Trans Tech Publications, 2001 (Materials Science Forum 353/356)
ISBN: 0-87849-873-7
pp.331-334
European Conference on Silicon Carbide and Related Materials (ECSCRM) <3, 2000, Kloster Banz>
English
Conference Paper
Fraunhofer IIS A ( IIS) ()

: http://publica.fraunhofer.de/documents/N-36800.html