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A DLTS study of hydrogen doped czochralski-grown silicon

: Jelinek, Moriz; Laven, Johannes G.; Kirnstoetter, Stefan; Schustereder, Werner; Schulze, Hans-Joachim; Rommel, Mathias; Frey, Lothar


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 365 (2015), Pt.A, pp.240-243
ISSN: 0168-583X
International Conference on Ion Beam Modification of Materials (IBMM) <19, 2014, Leuven>
Journal Article, Conference Paper
Fraunhofer IISB ()
deep level defects; proton implantation; silicon

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 1015 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.