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Microscopic charge carrier lifetime in silicon from a transient approach

: Heinz, F.D.; Kasemann, M.; Warta, W.; Schubert, M.C.


Applied Physics Letters 107 (2015), No.12, Art. 122101
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; lifetime; photoluminescence; silicon; TCSPC

We present an experimental approach to determine the charge carrier lifetime in silicon based on the measured transient decay of the emitted photoluminescence intensity, requiring only a crystal volume of 50 μm in diameter. This becomes feasible by a combination of the time correlated single photon counting technique and confocal microscopy. Using combined pulsed and pulse train laser excitation, we obtain a self-consistent charge carrier lifetime in a high dynamic range from 100 ns to ms and an injection range from 1010 cm−3 to high injection densities. An iterative data evaluation routine incorporates all effects induced by the spatially non-homogeneous charge carrier generation.