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Wafer scale characterization of interface state densities without test structures by photocurrent analysis

 
: Rommel, M.; Groß, M.; Frey, L.; Bauer, A.J.; Ryssel, H.

Kolbesen, B.O. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 ; proceedings of the satellite symposium to ESSDERC 2005, Grenoble, France ; Satellite Symposium on Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing
Pennington, NJ: ECS, 2005 (Electrochemical Society. Proceedings 2005-10)
ISBN: 1-566-77428-4
pp.113-122
Satellite Symposium on Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing (DECON) <4, 2005, Grenoble>
European Solid State Device Research Conference (ESSDERC) <35, 2005, Grenoble>
English
Conference Paper
Fraunhofer IISB ()
Grenzflächenzustandsdichte; Ladungsträgerlebensdauer; Prozesskontrolle

Abstract
In this work, a new method is presented for a direct and fast extraction of effective interface state densities Dit,eff at semiconductor insulator interfaces from photocurrent measurements. A theoretical model will be introduced which describes the experimental data with excellent agreement. The straightforward approach is also capable to reproduce the correlation factor between results from the photocurrent method and conventional Dit measurement methods.

: http://publica.fraunhofer.de/documents/N-36268.html