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Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers

: Rommel, M.; Groß, M.; Ettinger, A.; Lemberger, M.; Bauer, A.J.; Frey, L.; Ryssel, H.


Groeseneken, G.:
14th Biennial Conference on Insulating Films on Semiconductors 2005. Proceedings : June 22 - 24, 2005, Leuven, Belgium : contains all papers of INFOS 2005
Amsterdam: Elsevier, 2005 (Microelectronic engineering 80.2005)
Conference on Insulating Films on Semiconductors (INFOS) <14, 2005, Leuven>
Conference Paper, Journal Article
Fraunhofer IISB ()
Grenzflächenzustandsdichte; Grenzflächenrekombinationsgeschwindigkeit; Ladungsträgerlebensdauer; elektrostatische Passivierung

In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are presented and discussed. The results show the applicability of the technique for a reliable process control and include data on high-k layers for the first time. Comparison of experiment and simulation is used to explain the injection level dependence of the measurements.