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2005
Conference Paper
Titel
Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers
Abstract
In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are presented and discussed. The results show the applicability of the technique for a reliable process control and include data on high-k layers for the first time. Comparison of experiment and simulation is used to explain the injection level dependence of the measurements.