Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. High temperature SOI CMOS technology and circuit realization for applications up to 300°C
| Institute of Electrical and Electronics Engineers -IEEE-; IEEE Circuits and Systems Society:
IEEE International Symposium on Circuits and Systems, ISCAS 2015. Proceedings. Vol.2 : 24-27 May 2015, Lisbon, Portugal
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8392-6
ISBN: 978-1-4799-8391-9
ISBN: 978-1-4799-8390-2
pp.1162-1165 |
| International Symposium on Circuits and Systems (ISCAS) <2015, Lisbon> |
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| English |
| Conference Paper |
| Fraunhofer IMS () |
| Silicon-on-Insulator (SOI); high temperature; mixed-signal design |
Abstract
Today an increasing number of applications in fields like power electronics or sensor signal conditioning are demanding for integrated circuits supporting an extended temperature range. Mixed signal circuits featuring analog circuitry, analog to digital converters as well as embedded microcontrollers and on-chip memories are requested to operate up to 300°C or even more. This paper outlines technological and design specific challenges as well as limiting factors for integrated circuits at high temperatures realized in a Silicon-on-Insulator (SOI) CMOS technology. The technology and circuit design techniques are presented based on a complex design example. Finally performance parameters of basic building blocks measured up to 300°C are shown.