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Lifetime limitations of epitaxial P- and N-type Si foils

: Janz, S.; Milenkovic, N.; Drießen, M.; Reber, S.

Fulltext urn:nbn:de:0011-n-3586237 (521 KByte PDF)
MD5 Fingerprint: d17a3572daa61dea4fd33c97b5e97371
Created on: 23.9.2015

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Photonics Society:
IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 : 14-19 June 2015, New Orleans, LA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-7944-8
Photovoltaic Specialists Conference (PVSC) <42, 2015, New Orleans/La.>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; Si-epitaxy; porosification; lift-off

In this publication we present p- and n-type Si foils with thicknesses between 40 and 150 μm produced with epitaxy on porous Si followed by mechanical lift-off. We discuss the influence of thickness and surface passivation quality on the relation between τeff and τbulk. Appearing inhomogeneity of minority carrier lifetimes over the sample area is found to be due to porous Si removal and surface cleaning issues. However, on ntype Si foils we could achieve τbulk values of up to 800 μs. As such Si foils are sufficient for conversion efficiencies well above 20 % [1] we are confident that solar cells can be processed with our material exceeding this benchmark.