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Ge-on-Si photodiode with black silicon boosted responsivity

: Steglich, M.; Oehme, M.; Käsebier, T.; Zilk, M.; Kostecki, K.; Kley, Ernst.-Bernhard; Schulze, J.; Tünnermann, Andreas


Applied Physics Letters 107 (2015), No.5, Art. 051103, 5 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer IOF ()

Normal-incidence Ge-on-Si photodiodes with 300nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34A/W at 1550nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.