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Active cold load MMICs for Ka-, V-, and W-bands

: Kantanen, M.; Weissbrodt, E.; Varis, J.; Leuther, A.; Seelmann-Eggebert, M.; Rösch, M.; Schlechtweg, M.; Poutanen, T.; Sundberg, I.; Kaisti, M.; Altti, M.; Jukkala, P.; Piironen, P.


IET microwaves, antennas & propagation 9 (2015), No.8, pp.742-747
ISSN: 1751-8725
ISSN: 1751-8733
Journal Article
Fraunhofer IAF ()

Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.