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Degradation of hydrogenated amorphous silicon passivation films caused by sputtering deposition

: Meiners, B.-M.; Borchert, D.; Hohage, S.; Holinksi, S.; Schäfer, P.


Physica status solidi. A 212 (2015), No.8, pp.1817-1822
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; passivation; degradation; sputtering

The degradation of thin passivation films on silicon wafers after sputtering deposition with different process parameters has been investigated. Thin intrinsic amorphous silicon passivation films with different thicknesses and with different doped top layers were deposited on textured n-doped silicon wafers. The passivation quality was measured by microwave photoconduction decay lifetime measurements before and after the sputtering processes and also after an annealing process at 150°C in air for 12min. The degradation which was observed shows dependencies on the passivation film thickness, the deposition process parameters and the kind of the doped top layer. Some processes lead to a strong degradation of the passivation quality even after annealing. For others the initial passivation quality could be regained after annealing. The cause of the degradation was determined to be high energy plasma photons in the range of 300-375 nm.