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Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells

: Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrspohn, R.B.


Applied physics. A 120 (2015), No.3, pp.811-816
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Journal Article
Fraunhofer IWM ( IMWS) ()
Fraunhofer CSP ()

A method for the deposition of molybdenum oxide ((Formula presented.)) with high growth rates at temperatures below 200 (Formula presented.) based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric (Formula presented.) films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed.