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Impact of different dopants on the switching properties of ferroelectric hafniumoxide

 
: Schroeder, U.; Yurchuk, E.; Müller, J.; Martin, D.; Schenk, T.; Polakowski, P.; Adelmann, C.; Popovici, M.I.; Kalinin, S.V.; Mikolajick, T.

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Japanese journal of applied physics 53 (2014), No.8, Special issue 1, Paper 08LE02
ISSN: 0021-4922
ISSN: 1347-4065
English
Journal Article
Fraunhofer IPMS ()

Abstract
The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 C/cm 2 and a high coercive field of about 1MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54pm (Si) to 132pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling. ©2014 The Japan Society of Applied Physics.

: http://publica.fraunhofer.de/documents/N-351814.html