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Analysis of different models of iron precipitation in multicrystalline silicon

: Morishige, A.E.; Laine, H.S.; Schön, J.; Hofstetter, J.; Haarahiltunen, A.; Schubert, M.C.; Savin, H.; Buonassisi, T.


Institute of Electrical and Electronics Engineers -IEEE-:
40th IEEE Photovoltaic Specialist Conference, PVSC 2014 : Denver, Colorado, 08.06.2014-13.06.2014
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-4398-2
ISBN: 978-1-4799-4397-5
Photovoltaic Specialists Conference (PVSC) <40, 2014, Denver/Colo.>
Conference Paper
Fraunhofer ISE ()

Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions.