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Experimental analysis of bipolar SiC-devices for future energy distribution systems

 
: Huerner, A.; Mitlehner, H.; Erlbacher, T.; Bauer, A.J.; Frey, L.

:

Institute of Electrical and Electronics Engineers -IEEE-:
16h European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014. Vol.2 : 26-28 August 2014, Lappeenranta, Finland
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3016-6
ISBN: 978-1-4799-3015-9
pp.1483-1490
European Conference on Power Electronics and Applications (EPE) <16, 2014, Lappeenranta>
Energy Conversion Congress and Exposition (ECCE) <2014, Lappeenranta>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this study, the electrical performance of a bipolar switch (BiFET) fabricated on 4H-SiC proposed as solid state circuit breaker is discussed. Therefore, first results on the output and blocking characteristic are presented and analyzed. The bipolar switch indicates a current limiting output characteristic and robust behavior in off-state mode. Nevertheless, further improvement of the conduction properties by increasing the doping concentration in the p-type channel region has to be carried out. Furthermore, it is determined that for a clear understanding of the temperature dependency of the output characteristic, further investigations concerning the influence of the incomplete ionization, ambipolar lifetime, and emitter efficiency are mandatory.

: http://publica.fraunhofer.de/documents/N-351095.html