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3D IC/stacked device fault isolation using 3D magnetic field imaging

 
: Orozco, A.; Gagliolo, N.E.; Rowlett, C.; Wong, E.; Moghe, A.; Gaudestad, J.; Talanov, V.; Jeffers, A.; Torkashvan, K.; Wellstood, F.C.; Dobritz, S.; Boettcher, M.; Cawthorne, A.B.; Infante, F.

Electronic Device Failure Analysis Society -EDFAS-, Materials Park/Ohio; American Society for Metals -ASM-, Metals Park/Ohio:
40th International Symposium for Testing and Failure Analysis 2014. Conference Proceedings : November 9 - 13, 2014, George R. Brown Convention Center, Houston, Texas, USA
Materials Park, Ohio: ASM International, 2014
ISBN: 1-62708-074-0
ISBN: 978-1-62708-074-3
ISBN: 978-1-62708-075-0
pp.33-37
International Symposium for Testing and Failure Analysis (ISTFA) <40, 2014, Houston/Tex.>
English
Conference Paper
Fraunhofer IZM ()

Abstract
The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, real-estate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

: http://publica.fraunhofer.de/documents/N-351088.html