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2013
Conference Paper
Titel
Passivation of different black silicon surfaces by ALD deposited Al 2O3
Abstract
Optical properties of black silicon (b-Si) can be tailored to minimize reflection losses to less than 0.6 % between 300-1000 nm and to improve the absorption at the silicon band-edge by light-trapping. Recently, metal assisted wet-chemically etched (MACE) b-Si was exploited to fabricate high efficiency (18.2 %) solar cells with surface passivation by thermal SiO2 and recombination velocities (SRV) of 100 cm/s [1]. We compare surface passivation performance of ALD-Al2O3 on different dry and wet etched nanostructures. SRVs 8 cm/s on bifacially black 1 cm p-type Si FZ wafers were measured. This technological advance will enable higher efficiencies for various PV-cell concepts.