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2013
Conference Paper
Titel
Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3
Abstract
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.