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Study of parameters influencing the response of RADFETs

 
: Metzger, S.; Hoeffgen, S.K.; Kuendgen, T.; Spiezia, G.; Brugger, M.; Danzeca, S.; Mekki, J.; Oser, P.J.

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Institute of Electrical and Electronics Engineers -IEEE-:
14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013 : Oxford, United Kingdom, 23 - 27 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-5055-6 (print)
ISBN: 978-1-4673-5057-0 (online)
pp.357-360
European Conference on Radiation and its Effects on Components and Systems (RADECS) <14, 2013, Oxford>
English
Conference Paper
Fraunhofer INT ()

Abstract
Fraunhofer INT together with CERN calibrated different RADiation-sensitive Field-Effect Transistor (RADFET) radiation dosimeters from two vendors to be operated in CERN's RadMON system with Co-60 gamma radiation to monitor total ionizing dose (TID) at CERN accelerators [1]. The aim of this study was to find out which RADFET type was best suited for the RadMON system and what parameters influence the radiation-induced threshold voltage shift of the pMOS transistors most. Therefore we looked at the sensor response while changing doserate, reading conditions, package, lot-to-lot variation during irradiation. In addition CERN previously examined the effects of different particle or radiation types on their response [2]. Compared to former measurements we reached excellent accuracies which guarantees good dose sensitivity during application at CERN. Additionally the findings of this study can also be of interest for those who will use RADFETs in space or other radiation envi ronments as dosimeters.

: http://publica.fraunhofer.de/documents/N-350680.html