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Microstructure investigation of Cu/SnAg solid-liquid interdiffusion interconnects by Electron Backscatter Diffraction

: Panchenko, I.; Grafe, J.; Mueller, M.; Wolter, K.-J.


Institute of Electrical and Electronics Engineers -IEEE-, Singapore Section, Reliability CPMT EDS Chapter; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 15th Electronics Packaging Technology Conference, EPTC 2013 : Singapore, 11 - 13 December 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-2833-0
ISBN: 978-1-4799-2835-4
ISBN: 978-1-4799-2834-7
ISBN: 978-1-4799-2832-3
Electronics Packaging Technology Conference (EPTC) <15, 2013, Singapore>
Conference Paper
Fraunhofer IZM ()

The investigation of the grain structure of Cu/SnAg interconnects produced by solid-liquid interdiffusion (SLID) bonding is presented in this study. The texture analysis was carried out using Electron Backscatter Diffraction (EBSD). The samples were manufactured by flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and square Cu bumps on the top die at a temperature of 250°C and bonding time between 35 s and 40 s. The influence of the bonding process carried out under pressure of 1.73 MPa and without pressure on the orientation of the Cu6Sn5 grains is shown. The preferred grain orientation of Cu6Sn5 is <0001> parallel to the sample direction [010] (growth direction of the intermetallic compounds (IMCs), perpendicular to Cu surface). This texture decreases with the application of bonding pressure. The Cu grains show the preferred directions <101> and <111> parallel to the electroplating direction.