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QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz

: Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.

European Microwave Association:
43rd European Microwave Conference, EuMC 2013. Proceedings : 6.-11. Oktober, 2013, Nürnberg. Part of European Microwave Week, EuMW
Piscataway, NJ: IEEE, 2013
ISBN: 978-2-87487-031-6
ISBN: 978-1-4799-0264-4
European Microwave Conference (EuMC) <43, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Conference Paper
Fraunhofer IAF ()

A GaN high electron mobility transistor technology with a gate length of 0.25 m has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5-3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5 dBm was measured at 0.8 GHz, with a linear output power of 24 dBm over the full bandwidth. The MMIC was further assembled and measured in a low-cost plastic QFN package on an evaluation board with optimized thermal design and passive cooling. At a power dissipation of 3 W the packaged LNA yields an OIP3 of 35-38 dBm over the full bandwidth at a noise figure of < 1.9 dB.