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Non-volatile data storage in HfO2-based ferroelectric FETs

: Schroeder, U.; Yurchuk, E.; Mueller, S.; Mueller, J.; Slesazeck, S.; Schloesser, T.; Trentzsch, M.; Mikolajick, T.


IEEE Electron Devices Society:
12th Annual Non-Volatile Memory Technology Symposium, NVMTS 2012 : Singapore, 31 October - 2 November 2012
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-2849-4
ISBN: 978-1-4673-2847-0
ISBN: 978-1-4673-2848-7
Annual Non-Volatile Memory Technology Symposium (NVMTS) <12, 2012, Singapore>
Conference Paper
Fraunhofer CNT ()

The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 C/cm2 and a coercive field of about 1 MV/cm was observed when Si:HfO2 was used as a ferroelectric material. Switching times of 10 ns were demonstrated and the ferroelectric properties were verified in the temperature range from 80 K to 470 K. N-channel MFIS-FETs (Metal-Ferroelectric- Insulator-Semiconductor Field-Effect Transistors) with poly-Si/TiN/Si:HfO 2/SiO2/Si gate stack with a gate length equal or below 260 nm were successfully fabricated. The switching characteristics, endurance and retention properties were analyzed. A memory window of 1.2 V was obtained. Endurance performance of up to 104 cycles was verified. Retention characteristics were measured and 10 years data retent ion was extrapolated at 25 °C and 150 °C.