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2015
Journal Article
Titel
Passivation-induced cavity defects in laser-doped selective emitter Si solar cells - formation model and recombination analysis
Abstract
Laser-induced selective Si doping and simultaneous ablation of a dielectric passivation layer is a promising technology for the creation of efficient and cost-effective solar cells. In this paper, the electrical quality of emitters produced with a 532-nm continuous-wave laser will be discussed using elaborate analysis of quasi-steady-state photoconductance (QSSPC) measurements. It will be shown that these emitters cause good charge carrier shielding, which leads to emitter saturation current densities as low as 240 fA/cm2 for unpassivated surfaces. If an SiNx layer is present during laser doping, the emitter recombination increases by a factor of three. This detrimental effect is put down to the formation of microcavities within the recrystallized Si. A model of the ablation mechanism and cavity formation for long laser pulses is proposed, with the experimental data in this study serving as a limiting case for long irradiation lengths.
Project(s)
rEvolution
Funder
Bundesministerium fĂĽr Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
Tags
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Solarzellen - Entwicklung und Charakterisierung
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Silicium-Photovoltaik
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Charakterisierung von Prozess- und Silicium-Materialien
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Dotierung und Diffusion
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Oberflächen - Konditionierung
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Passivierung
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Lichteinfang
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Kontaktierung und Strukturierung
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Herstellung und Analyse von hocheffizienten Solarzellen
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Laser
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QSSPC
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Emitter
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SiNx
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ablation