Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Passivation-induced cavity defects in laser-doped selective emitter Si solar cells - formation model and recombination analysis

: Geisler, C.; Kluska, S.; Hopman, S.; Glatthaar, M.

Postprint urn:nbn:de:0011-n-3494836 (974 KByte PDF)
MD5 Fingerprint: 5403ec8498a8bfa9b06ef74bb4983b09
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 16.8.2019

IEEE Journal of Photovoltaics 5 (2015), No.3, pp.792-798
ISSN: 2156-3381
ISSN: 2156-3403
Bundesministerium für Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
0325586B; rEvolution
Journal Article, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen; Laser; QSSPC; Emitter; SiNx; ablation

Laser-induced selective Si doping and simultaneous ablation of a dielectric passivation layer is a promising technology for the creation of efficient and cost-effective solar cells. In this paper, the electrical quality of emitters produced with a 532-nm continuous-wave laser will be discussed using elaborate analysis of quasi-steady-state photoconductance (QSSPC) measurements. It will be shown that these emitters cause good charge carrier shielding, which leads to emitter saturation current densities as low as 240 fA/cm2 for unpassivated surfaces. If an SiNx layer is present during laser doping, the emitter recombination increases by a factor of three. This detrimental effect is put down to the formation of microcavities within the recrystallized Si. A model of the ablation mechanism and cavity formation for long laser pulses is proposed, with the experimental data in this study serving as a limiting case for long irradiation lengths.