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Novel low-k polycyanurates for integrated circuit (IC) metallization

: Schulze, K.; Schuldt, U.; Kahle, O.; Schulz, S.E.; Uhlig, M.; Uhlig, C.; Dreyer, C.; Bauer, M.; Gessner, T.


Gessner, T.:
Ninth European Workshop on Materials for Advanced Metallization 2005. Proceedings : 6 - 9 March 2005, Dresden, Germany
Amsterdam: Elsevier, 2005 (Microelectronic engineering 82.2005, 3/4)
European Workshop on Materials for Advanced Metallization (MAM) <9, 2005, Dresden>
Conference Paper, Journal Article
Fraunhofer IZM, Einrichtung Polymermaterialien und Composite ( PYCO) ()
low-k; ULK; polycyanurate; copper damascene technology

Polycyanurate-based intermetal dielectrics with lowered relative permittivity in comparison to silicon oxide as well as good electrical, thermal and mechanical properties permitting an easy low-step processing were developed. A thin reference film with a k-value of 2.91 (at 0.1 MHz) consisting of a three-dimensional polycyanurate network was obtained by curing the fluorine containing difunctional cyanate ester monomer 2,2'-bis(4-cyanatophenyl)-1,1,1,3,3,3-hexafluoroisopropylidene (F10). By co-curing of F10 with a bulky trifunctional cyanate ester monomer the dielectric constant was increased. However, co-curing with monofunctional cyanate ester monomers reduces the dielectric constant and the lowest k-value of 2.54 (at 0.1 MHz) was found for a cyanurate copolymer with a high content of m-(trifluoromethyl)phenyl structural units. All films investigated had a leakage current less-than-or-equals, slant10?10 A/cm2 and thermal and mechanical properties suitable for industrial application. Finally, first patterning attempts showed good potential for producing Cu damascene structures. Patterning using a PECVD SiO2 hard mask with partial hard mask opening was developed using ICP etch with CHF3, CF4 and He. The achieved structures showed straight profiles and no significant defects.