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Advanced activation of ultra-shallow junctions using flash-assisted RTP

Fortgeschrittene Aktivierung von ultraflachen p-n-Übergängen durch Flash-assistierte Kurzzeitausheilung
: Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.


Pelaz, L.:
EMRS 2005, Symposium D Materials Science and Device Issues for Future Si-Based Technologies : Held from May 31st to June 3rd in Strasbourg, France
Amsterdam: Elsevier, 2005 (Materials Science and Engineering. B 124/125.2005)
Symposium D Materials Science and Device Issues for Future Si-Based Technologies <2005, Strasbourg>
European Materials Research Society (Spring Meeting) <2005, Strasbourg>
Conference Paper, Journal Article
Fraunhofer IISB ()
ultra-shallow junction; flash-assisted RTP; advanced-logic device; crystalline and amorphous silicon; hall-effect measurement; dopant activation and deactivation; boron

A key issue associated with the continuous reduction of dimensions of CMOS transistors is the realization of highly conductive, ultra-shallow junctions for source/drain extensions. Millisecond annealing as an equipment technology provides an ultra-sharp temperature peak of 1.6 ms width which favors dopant activation but nearly suppresses dopant diffusion to form extremely shallow, highly electrically-activated junctions without melting the substrate. On boron beamline implanted wafers the formation of junctions at peak temperatures ranging from 1275 up to 1325 °C was investigated. In the special case of boron, silicon wafers deeply pre-amorphized with Ge were also used. The thermal stability of these boron profile distributions was evaluated by subsequent thermal anneals ranging from 250 to 1050 °C with times from a few seconds to several hundred seconds. From these experiments the deactivation/re-activation mechanism for subsequent annealing can be explained. All the junctions were analyzed by four-point probe measurements; selected samples were analyzed by Hall-effect, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM).