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Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation

: Redaelli, L.; Wenzel, H.; Piprek, J.; Weig, T.; Einfeldt, S.; Martens, M.; Lükens, G; Schwarz, U.T.; Kneissl, M.


IEEE Journal of Quantum Electronics 51 (2015), No.8, Art. 2000506, 6 pp.
ISSN: 0018-9197
Journal Article
Fraunhofer IAF ()
diode lasers; gallium nitride; index-antiguiding; index change; lasing threshold; simulation

The threshold current density of narrow (1.5 µm) ridge-waveguide InGaN multi-quantum-well laser diodes and the shape of their lateral far-field patterns strongly depend on the etch depth of the ridge waveguide. Both effects can be attributed to strong index-antiguiding. The value of the antiguiding factor R = 10 is experimentally determined near thres-hold by measurements of the current-dependent gain and refractive index spectra. The device performances are simu-lated self-consistently, solving the Schrödinger–Poisson equations and the equations for charge transport and waveguiding. Assuming a carrier-induced index change that matches the experimentally determined antiguiding factor, both the measured high-threshold current and the shape of the far-field pattern of lasers with shallow ridges can be reproduced theoretically.