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An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power

Ein AlGaN/GaN Push-Pull HEMT Verstärker mit 400 MHz Bandbreite and 100 W Spitzenausgangsleistung
 
: Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

IEEE Electron Devices Society:
International Electron Devices Meeting 2005
Piscataway, NJ: IEEE, 2005
ISBN: 0-7803-9268-X
International Electron Devices Meeting <51, 2005, Washington/DC>
English
Conference Paper
Fraunhofer IAF ()
GaN; HEMT; packaging; Aufbautechnik; mobile communication; Mobilfunk; base station; Basisstation; ACPR

Abstract
This work describes the operation of AlGaN/GaN HEMTs on s.i. SiC substrate in a broadband AlGaN/GaN Push-pull amplifier for 3G/4G infrastructure applications between 1.8 GHz and 2.2 GHz. The device yields linear gain of 12.9 dB, a 3 dB bandwidth of 400 MHz between 1.8 GHz and 2.2 GHz, and a maximum output power of 102 W at 1.95 GHz under single carrier 16 channel W-CDMA conditions. Linearity evaluation further yields a peak output power of 45 dBm for an ACLR of -45 dBc at 5 MHz offset at 1.95 GHz.

: http://publica.fraunhofer.de/documents/N-34755.html