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GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band

GaN/AlGaN HEMTs für hochlineare Kommunikationsanwendungen im L-Frequenz Band
: Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G.

Gigahertz 2005 : Uppsala, Sweden, November 8-9, 2005
Uppsala, 2005
Gigahertz Symposium <2005, Uppsala/Schweden>
Conference Paper
Fraunhofer IAF ()
GaN; HEMT; linearity; Linearität; memory effect; Memoryeffekt; packaging; Aufbautechnik; mobile communication; Mobilfunk; base station; Basisstation

This work summarizes recent achievements for the use of GaN/AlGaN HEMTs on s.i. SiC substrates for highly linear 3G/4G base station communication applications. CW fundamental loadpull, harmonic loadpull, and ACLR measurements are performed for both device and circuits up to 2.7 GHz to demonstrate the enormous bandwidth and linearity potential of the GaN/AlGaN devices.