Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization

GaN Hybrid und MMIC Leistungsverstärker mit hoher Bandbreite: Entwurf und Charakterisierung
 
: Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G.

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
pp.373-376
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
English
Conference Paper
Fraunhofer IAF ()
HEMT; GaN; MMIC; amplifier; Verstärker; transistor; microstrip line; Mikrostreifenleitung; linearity; Linearität; SiC; substrate

Abstract
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.

: http://publica.fraunhofer.de/documents/N-34746.html