Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs

Ka-Band ALGaN/GaN HEMT Hochleistungs- und Treiberverstärker MMICs
 
: Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
pp.237-240
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
English
Conference Paper
Fraunhofer IAF ()
HEMT; GaN; MMIC; power amplifier; Leistungsverstärker; Ka-Band; satellite communication; Satellitenkommunikation; ACPR; linearity; Linearität

Abstract
In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.

: http://publica.fraunhofer.de/documents/N-34740.html