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Effect of bulk potential engineering on the transport properties of SiC MOSFETs: Characterization and interpretation

Effekt der Substratdotierung auf die Transporteigenschaften von SiC MOSFETs: Charakterisierung und Interpretation
 
: Uhnevionak, Viktoryia

:
Postprint urn:nbn:de:0011-n-3454190 (369 KByte PDF)
MD5 Fingerprint: 46aba4f07cf82526d54758fcf89732db
Created on: 10.7.2015


Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
pp.737-740
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
Bundesministerium für Bildung und Forschung BMBF
01SF0804; MobiSiC
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
4H-SiC MOSFET; bulk traps; interface trap density

Abstract
The effect of bulk potential engineering on the transport properties in the channel of SiC MOSFETs has been studied. For this purpose, n-channel SiC MOSFETs have been manufactured with different background doping concentrations and characterized electrically at room temperature by current-voltage as well as by Hall-effect measurements. To interpret the measurements performed, numerical simulations have been carried out using Sentaurus Device of Synopsys. The main finding of the simulation analysis is that the change in the depth of the band-bending has to be considered to explain the doping dependence of SiC MOSFET characteristics.

: http://publica.fraunhofer.de/documents/N-345419.html