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  4. Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates
 
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2015
Conference Paper
Title

Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substrates

Abstract
The defect structure of HVPE-GaN crystals are examined using synchrotron white-beam X-ray topography (SWXRT) and topography results are interpreted and discussed in comparison to reciprocal lattice point broadening from high resolution X-ray diffraction (HRXRD) measurements. Two as-received commercial HVPE-GaN wafers from two different vendors and one HVPEGaN which was grown on an ammonothermal GaN-seed are investigated in this study. From large-area topography the formation of a cellular defect network is identified for the commercial HVPE-GaN. Large differences in the crystal lattice misorientation deformation (mosaicity) are determined for the different samples by transmission section topography. For the HVPE-GaN grown on an ammonothermal GaN-seed a very low defect density was ascertained. From the contrasts of the topography threading screw-type dislocations and threading mixed-type dislocations were identified. The structure analyses show that the outstanding structural properties of the ammo-nothermal GaN-seed are adopted by the HVPE-GaN.
Author(s)
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Danilewsky, A.N.
Sochacki, T.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zajac, M.
Kucharski, R.
Bockowski, M.
McNally, P.J.
Mainwork
Wide Bandgap Semiconductor Materials and Devices 16  
Conference
Conference "Wide Bandgap Semiconductor Materials and Devices" 2015  
Electrochemical Society (ECS Meeting) 2015  
DOI
10.1149/06601.0093ecst
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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