Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

SWIR photodetector development at Fraunhofer IAF

 
: Rutz, F.; Kleinow, P.; Aidam, R.; Heussen, H.; Bronner, W.; Sieck, A.; Walther, M.

:

Dhar, N.K. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Image Sensing Technologies: Materials, Devices, Systems, and Applications II : 20 -23 April 2015; Baltimore, Maryland, United States
Bellingham, WA: SPIE, 2015 (Proceedings of SPIE 9481)
Paper 948107, 9 pp.
Conference "Image Sensing Technologies - Materials, Devices, Systems, and Applications" <2, 2015, Baltimore/Md.>
English
Conference Paper
Fraunhofer IAF ()
short-wave infrared; SWIR imaging; InGaAs; InAlAs; avalanche photodiode; APD

Abstract
For surveillance and reconnaissance applications in the short-wave infrared (SWIR) spectral range, the imaging sys-tems have to cope with usually very low photon flux densities. Thus, dark-current and noise characteristics of the focal plane array (FPA) are demanding. On the other hand, the challenge of detecting extremely low photocurrents can be mitigated by utilizing an internal gain as provided by avalanche photodiodes (APDs). Fraunhofer IAF has recently started the development of InGaAs-based SWIR detectors. We report on the current development status covering design consi-derations, epitaxy, process technology and electro-optical characterization. Detector structures based on both, classical InGaAs PIN homojunction diodes as well as InGaAs/InAlAs APDs in separated-absorption-grading-charge-and-multi-plication layer heterostructures, have been grown by molecular beam epitaxy on InP. Diodes structures were fabricated with a dry-etch mesa process and a subsequent dielectric passivation of the mesa sidewalls. High-resolution FPAs with 640 x 512 pixels and a 15 ?m pixel pitch based on PIN diodes have been assembled to a SWIR camera system in cooperation with AIM Infrarot-Module GmbH. Design variations, in particular for the APDs, were assisted by band-edge-profile simulations. APD test structures as well as fan-out hybrids have been characterized, revealing gain values larger than 300 at room temperature.

: http://publica.fraunhofer.de/documents/N-345072.html