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Mask Aligner Lithography for TSV-Structures using a Double-Sided (structured) Photomask

: Weichelt, Tina; Stuerzebecher, Lorenz; Zeitner, Uwe Detlef


Freymann, Georg von ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Advanced fabrication technologies for micro/nano optics and photonics VIII : February 07, 2015, San Francisco, California, United States
Bellingham, WA: SPIE, 2015 (SPIE Proceedings Series 9374)
ISBN: 978-1-62841-464-6
Paper 93740X, 6 pp.
Conference "Advanced Fabrication Technologies for Micro/Nano Optics and Photonics" <8, 2015, San Francisco/Calif.>
Conference Paper
Fraunhofer IOF ()

Through-silicon vias (TSV) are important for wafer level packaging (WLP) as they provide patterning holes through thick silicon dies to integrate and interconnect devices which are stacked in z-direction. For economic processing TSV fabrication primarily needs to be cost-effective including especially a high throughput. Furthermore, a lithography process for TSV has to be stable enough to allow patterning on pre-structured substrates with inhomogeneous topography. This can be addressed by an exposure process which offers a large depth of focus. We have developed a mask-aligner lithography process based on the use of a double-sided photomask to realize aerial images which meet these constraints.