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High performance H-2 evolution realized in 20 mu m-thin silicon nanostructured photocathodes

: Jung, J.Y.; Park, M.J.; Li, X.; Kim, J.H.; Wehrspohn, R.B.; Lee, J.H.


Journal of materials chemistry. A, Materials for energy and sustainability 3 (2015), No.18, pp.9456-9460
ISSN: 2050-7488
ISSN: 2050-7496
Journal Article
Fraunhofer IWM ( IMWS) ()

Thickness reduction in high-purity silicon wafers is beneficial for cost-efficient hydrogen evolution utilizing silicon photocathodes. However, two major issues need to be resolved: insufficient light absorption by a thin Si absorber and poor charge transfer reaction by dominant surface recombination. Here, we present 20 mm-thin Si photocathodes employing Pt-nanoparticle-coated silicon nanoholes that realize a photocurrent of 23 mA cm(-2) (at 0 V vs. RHE) corresponding to the amount typically achieved by a conventional wafer (similar to 200 mm-thick).