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High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides

Rauscharme 110 GHz Verstärker MMICs mit hoher Kleinsignalverstärkung basierend auf Koplanartechnologie und metarmorphen HEMTs mit einer Gatelänge von 120 nm
 
: Bessemoulin, A.; Fellon, P.; Gruenenpuett, J.; Massler, H.; Reinert, W.; Kohn, E.; Tessmann, A.

European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
pp.77-80
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
English
Conference Paper
Fraunhofer IAF ()
low-noise amplifier (LNA); rauscharmer Verstärker; MMIC; millimeter wave integrated circuit; cascode amplifier; Kaskodentransistor; W-Band; metamorphic; metamorph; HEMT; coplanar waveguide; Koplanarleitung

Abstract
This paper presents the design and performance of 110-GHz low noise amplifier MMICs, based on coplanar technology, and utilizing 120-nm gate-length Metamorphic HEMTs. Thanks to a cascode device, a single-stage amplifier achieves 8-dB small signal gain, with less than 4-dB noise figure at 105 GHz, within a chip size of only 0.725 mm2. The 2- and 3-stage LNAs exhibit small signal gains of more than 15- and 22-dB, respectively over the 100-115 GHz frequency range, with associated measured noise figures of 4.5 dB at 105 GHz; the chip area for these circuits are less than 2- and 3 mm2. To the author's knowledge, these results are amongst the lowest noise figures reported to date for uniplanar amplifier MMICs operating at these frequencies.

: http://publica.fraunhofer.de/documents/N-34318.html