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A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Ein balancierter Verdoppler MMIC für 150 bis 220 GHz basierend auf einer metamorphen HEMT-Technologie mit einer Gatelänge von 50 nm
 
: Schwörer, C.; Campos-Roca, Y.; Leuther, A.; Tessmann, A.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Weimann, G.

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European Microwave Association:
European Microwave Week 2005. CD-ROM : 35th European Microwave Conference 2005. European Conference on Wireless Technologies 2005. European Gallium Arsenide and other Compound Semiconductors Application Symposium. European Radar Conference
London: Horizon House, 2005
ISBN: 2-9600551-0-1
pp.565-568
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <13, 2005, Paris>
English
Conference Paper
Fraunhofer IAF ()
balanced doubler; balancierter Doppler; MMIC; G-Band; Balun; resistive mixer; resistiver Mischer; metamorphic; metamorph; HEMT; coplanar waveguide; Koplanarleitung

Abstract
A coplanar millimeter wave doubler MMIC covering the entire G-Band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand Balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

: http://publica.fraunhofer.de/documents/N-34314.html