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Plasma etching for industrial in-line processing of c-Si solar cells

: Rentsch, J.; Emanuel, G.; Schetter, C.; Aumann, T.; Theirich, D.; Gentischer, J.; Roth, K.; Fritzsche, M.; Dittrich, K.-H.; Preu, R.

Fulltext urn:nbn:de:0011-n-342121 (204 KByte PDF)
MD5 Fingerprint: 77baffb6b2c0df8586d6f8fa8289d566
Created on: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Thinner wafers and the reduction of breakage losses make it attractive for solar cell manufacturers to use inline production systems. Closing the gap between diffusion and in-line silicon nitride deposition systems a plasma etching system has been designed suitable for a throughput of 1000 wafer/h with an automated transport system. Different plasma sources appropriate for etching large areas were tested and etch rates of around 13 μm/min for saw damage removal could be reached with sufficient homogeneity. For phosphorous glass (PSG) removal selectivities between PSG and silicon above 10 could be achieved with a CF4/C2H4 etch gas mixture with sufficient PSG etch rates of around 80 nm/min. Solar cells processed with the plasma PSG removal step show slightly decreased efficiencies attributed to the plasma induced damage to the emitter layer and the silicon bulk. Further process optimization is needed to reduce this damage.