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Quantitative correlation of the metastable defect in Cz-silicon with different impurities

: Rein, S.; Diez, S.; Falster, R.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-342092 (99 KByte PDF)
MD5 Fingerprint: ee45052a5f0b51cec2c0dc215fe0d809
Created on: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

In order to identify the components responsible for the creation of the metastable defect in boron-doped Cz-Si, the impact of different impurities on the defect concentration has been examined carefully on a wide range of different Cz-materials by means of lifetime measurements. In good agreement with previous studies a linear dependence on the boron concentration has been found. The impact of carbon can be neglected. Concerning the correlation with the interstitial oxygen concentration, a correlation exponent between 1.5 and 1.9 has been found. This exponent is shifted to its lower bound after an optimized high-temperature pretreatment, whose impact on the quantitative correlations is investigated in detail. The strong scatter in the oxygen correlation points towards an indirect impact of oxygen on the defect center. Since the vacancy concentration is known to strongly influence oxygen behavior, its impact on the metastable defect concentration is investigated.