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Investigation of various surface passivation layers using oxide/nitride stacks of silicon solar cells

: Lee, J.Y.; Dicker, J.; Rein, S.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-341895 (267 KByte PDF)
MD5 Fingerprint: b24f7007e8f6a454831b6ec74a72131c
Created on: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

In this work, three different surface passivation technologies are used: classical thermal oxidation (CTO), rapid thermal oxidation (RTO) and silicon nitride using PECVD. Eight combined passivation schemes including SiO 2/SiNx stacks are investigated on 1 ohm cm FZ silicon without and with emitter (100 ohm/ and 40 ohm /). SiO2/SiNx stack passivation results in excellent lifetime of 1361 µs without emitter and shows as a good passivation quality as CTO (300-400 µs) for 100 ohm/ emitter. The RTO/SiNx stack layers are used to passivate front and rear surfaces of the solar cells. The planar RTO/SiNx cell has a very high V(ind oc) of 675.6 mV. However, the Jsc and FF of the RTO/SiNx cells are lower than those of CTO cells. The main reasons of J(ind sc) and FF losses are also discussed.