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Pure experimental determination of surface recombination properties with high reliability

: Kampwerth, H.; Rein, S.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-341658 (445 KByte PDF)
MD5 Fingerprint: f41cfd37773c2ed957c35bea5684ee82
Created on: 26.10.2012

Kurokawa, K. ; Institute of Electrical and Electronics Engineers -IEEE-:
3rd World Conference on Photovoltaic Energy Conversion 2003. Proceedings. Vol.B : Joint conference of 13th PV Science & Engineering Conference, 30th IEEE PV Specialists Conference, 18th European PV Solar Energy Conference ; Osaka International Congress Center "Grand Cube", Osaka, Japan, 11 - 18 May 2003
Osaka, 2003
ISBN: 4-9901816-1-1
World Conference on Photovoltaic Energy Conversion (WCPEC) <3, 2003, Osaka>
PV Science and Engineering Conference <13, 2003, Osaka>
PV Specialists Conference <30, 2003, Osaka>
European PV Solar Energy Conference <18, 2003, Osaka>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A major task in developing new surface passivation layers for solar cells is their electrical characterization. A key value is the surface recombination velocity S. It can be extracted from the measured effective carrier lifetime tau(ind eff) in two ways: (1) with tau(ind eff) measured at one wafer and theoretical assumptions made for the bulk lifetime which leads to a major uncertainty in the S-determination. Or (2) with tau(ind eff) from a set of wafers with identically processed surfaces and different thicknesses W. Plotting ?eff in an 1/tau(ind eff) vs. 1/W-diagram, the slope of a linear fit to the data equals 2S. The infeed grinder used in our study to prepare wafers with different thicknesses is an excellent tool to produce identical, planar surfaces with low damage depth and high reproducibility. Final damage-etching gives a perfect initial point for surface texture and passivation steps. By means of this technique S is determined for oxide-passivation surfaces on different doping concentrations.