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Physics and applications of InAs/(GaIn)Sb-based short period superlattices

Physik und Anwendung von InAs/(GaIn)Sb kurzperiodischen Übergittern
: Fuchs, F.; Rehm, R.; Schmitz, J.; Fleißner, J.; Walther, M.

Kono, J.; Leotin, J. ; Institute of Physics -IOP-, London:
Narrow Gap Semiconductors : Proceedings of th 12th International Conference on Narrow Gap Semiconductors, Toulouse, France
London: IOP Publishing, 2005 (IOP Conference Series 26)
ISBN: 0-7503-1016-2
International Conference on Narrow Gap Semiconductors <12, 2005, Toulouse>
Conference Paper
Fraunhofer IAF ()
InAs/(GaIn)Sb superlattice; InAs/(GaIn)Sb Übergitter; infrared detector; IR detector; IR-Detektor

The physical properties of the InAs/GaInSb SL system are described with emphasis on the application for infrared detection. Examples for material optimization using optical methods, such as photoluminescence spectroscopy are given. Recent progress on the passivation of infrared photodiodes is summarized. As an example for the successful application of the material system a fully integrated mid-infrared camera equipped with a 256 x 256 focal plane array is presented.