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High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

: Fuchs, F.; Weimer, U.; Pletschen, W.; Schmitz, J.; Ahlswede, E.; Walther, M.; Wagner, J.; Koidl, P.


Applied Physics Letters 71 (1997), No.22, pp.3251-3253
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn)Sb superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off wavelength around 8 µm show a current responsivity of 2 A/W. By proper adjustment of the p-doping level above the n-background concentration the depletion width exceeds a critical size of about 60 nm, leading to the suppression of band-to-band tunneling currents. Above that critical width the dynamic impedance R0A at 77 K reaches values above 1 kV cm2 leading to a Johnson-noise-limited detectivity in excess of 1X10(12) cm/Hz/W.