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Energy level of the Si-related DX-center in (AlyGa1-y)1-xInxAs

: Heckelmann, S.; Lackner, D.; Bett, A.W.


Applied Physics Letters 106 (2015), No.10, Art. 102104, 5 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; semiconductor; Center; material

For the quaternary material (Al y Ga1− y )1− x In x As, the energy level of the silicon-related deep electron trap known as the DX-center is calculated. In addition, the composition range y(x) is derived, for which the silicon-related DX-center level is below the conduction band minimum and thus electronically active. Eventually, the result of the calculation is compared with available measurement data, revealing good agreement regarding the composition when the DX-center energy level crosses the conduction band minimum.