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Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al(2)O(3) wafers

Verbesserte GaN-Morphologie mittels Hydrid-Gasphasen Epitaxie auf fehlorientierten Al(2)O(3) Wafern
 
: Scholz, F.; Brueckner, P.; Habel, F.; Peter, M.; Köhler, K.

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Applied Physics Letters 87 (2005), No.18, Art. 181902, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; hydride; vapor phase epitaxy; Gasphasenepitaxie; optical spectroscopy; optische Spektroskopie

Abstract
Crack-free thick GaN layers have been grown by hydride vapor phase epitaxy on on-axis as well as on off-axis GaN-Al2O3 templates. A dramatic difference in surface quality could be traced back to the misorientation of the substrates: Mirror-like layers have been obtained for slightly off-oriented substrates, whereas pyramids and other surface structures were found on samples grown on exactly oriented wafers. Such excellent surfaces may make further surface treatment prior to a subsequent use of these wafers in further epitaxial processes obsolete.

: http://publica.fraunhofer.de/documents/N-33715.html