Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Low temperature deposition of silicon nitride using Si3Cl8

 
: Riedel, S.; Sundqvist, J.; Gumprecht, T.

:

Thin solid films 577 (2015), pp.114-118
ISSN: 0040-6090
English
Journal Article
Fraunhofer IPMS ()

Abstract
We demonstrate the deposition of SixNy thin films using octachlorotrisilane (Si3Cl8) and ammonia between 300 and 500 degrees C by an atomic layer deposition-like growth mechanism. Although there are chemical vapor deposition growth mechanisms present, which lead to an incomplete saturation, a step coverage >80% in high aspect ratio (>60:1) trenches could be achieved. The deposited films oxidize after contact with ambient air leading to substoichiometric N/Si ratios. Increasing the deposition temperature diminishes this oxidation. At temperatures >390 degrees C a bulk N/Si ratio of similar to 1.3 is achieved. The capacitance-voltage (C-V) measurements of these films yield a k value of similar to 6 and a strong C-V hysteresis indicates significant charge trapping.

: http://publica.fraunhofer.de/documents/N-336591.html