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Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate

 
: Nebrich, L.; Neumeier, K.; Stadler, A.; Weber, J.; Bensch, F.; Kreuzer, S.; Vogg, G.; Herrmann, K.; Klumpp, A.; Wieland, R.; Bonfert, D.; Soldner, W.; Ramm, P.

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Kasper, E.:
Second International SiGe Technology and Device Meeting, ISTDM 2004. Proceedings : Kleist-Forum, Frankfurt (Oder), Germany, 16 - 19 May: From materials and process technology to device and circuit design
Oxford: Pergamon, 2005 (Materials science in semiconductor processing 8.2005, 1/3)
pp.429-433
International SiGe Technology and Device Meeting (ISTDM) <2, 2004, Frankfurt/Oder>
English
Conference Paper, Journal Article
Fraunhofer IZM ()

: http://publica.fraunhofer.de/documents/N-33001.html